| PART |
Description |
Maker |
| ISL9R1560G2 ISL9R1560S3S ISL9R1560P2 ISL9R1560S2 I |
15A, 600V StealthDiode 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-262
15A, 600V Stealth Diode
15A/ 600V Stealth Diode
15A, 600V Stealth⑩ Diode
15A, 600V Stealth Single Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MUR1560 RURP1560 RURP1540 MUR1540 FN2778 |
15A/ 400V - 600V Ultrafast Diodes
From old datasheet system
(MUR1540 / MUR1560) 15A / 400V - 600V Ultrafast Diodes
15A, 400V - 600V Ultrafast Diodes(15A, 400V - 600V 瓒?揩浜??绠??ㄤ?寮???垫嚎
|
INTERSIL[Intersil Corporation]
|
| PS21964-4S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-AT PS21964-CT PS21964-T PS21964-TW |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| SKW15N60 SKB15N60 SKP15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-Technology with An...
|
INFINEON[Infineon Technologies AG]
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| ISL9K1560G ISL9K1560G3 |
15A, 600V Stealth Dual Diode
15A 600V Stealth Dual Diode
15A, 600V Stealth⑩ Dual Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT
N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT
(STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HGT1S3N60B3S HGT1S3N60B3S9A |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3.5A I(C) | TO-263AB
TRANS IGBT CHIP N-CH 600V 7A 3TO-263AB RAIL
|
Fairchild Semiconductor
|
| IRG4PC40 IRG4PC40F IRG4PC40F-EPBF |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
49 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
